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Samsung 970 EVO Plus 1 TB (Elpis + V6)

1 TB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 970 EVO Plus is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 970 EVO Plus interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the 970 EVO Plus, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 115 GB, once it is full, writes complete at 800 MB/s. The 970 EVO Plus is rated for sequential read speeds of up to 3,500 MB/s and 3,300 MB/s write; random IOPS reach up to 600K for reads and 550K for writes.
At its launch, the SSD was priced at 250 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2021
Price at Launch: 250 USD
Part Number: MZ-V7S1T0B/AM
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.06 W (Idle)
3.5 W (Avg)
6.4 W (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E3D4HF-BGCH
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx32
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,300 MB/s
Random Read: 600,000 IOPS
Random Write: 550,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 115 GB
(109 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

This die, in theory should have half the block count per each plane

May 6th, 2024 07:05 EDT change timezone

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