Report an Error

Fanxiang S770 2 TB

2 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Fanxiang S770 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Fanxiang S770 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Fanxiang has installed 128-layer TLC NAND flash on the S770, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The S770 is rated for sequential read speeds of up to 7,400 MB/s and 6,800 MB/s write.
At its launch, the SSD was priced at 147 USD. The warranty length is set to five years, which is an excellent warranty period. Fanxiang guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2022
Price at Launch: 147 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 2.0 (CDT1B)
Type: TLC
Technology: 128-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.1
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 141 per NAND String
90.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 620 µs
Block Erase Time (tBERS): 20 ms
Die Read Speed: 1280 MB/s
Die Write Speed: 70 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4
Capacity: 2048 MB
(2x 1024 MB)

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 6,800 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Read Time (tR): Maximum is 50 µs, typical is lower
Typical Program Time (tPROG): 620 µs
Maximum Program Time (tPROG): Maximum is 910 µs
Block Erase Time (tBERS): Maximum is 20 ms, typical is lower
Array Eficiency of over 92%
YMTC 128L Xtacking 2.0 cell architecture consists of two decks connected through deck-interface buffer layer which is the same process with KIOXIA 112L BiCS 3D NAND structure. Cell size, CSL pitch, and 9-hole VC layouts keep the same design and dimension (horizontal/vertical WL and BL pitches) with previous 64L Xtacking 1.0 cell. Total number of gates is 141 (141T) including selectors and dummy WLs for the TLC operation.
This layout has a 1x 4 Plane layout, each one lineup side by side
May 5th, 2024 07:29 EDT change timezone

Latest GPU Drivers

New Forum Posts

Popular Reviews

Controversial News Posts